Polarizabilities of shallow donors in inverse V-shaped quantum wells under laser field

The effect of the high-frequency laser field on the subband structure and on polarizabilities of the shallow donors in a GaAs/GaAlAs inverse V-shaped quantum well for different Al concentrations at the structure center is investigated. Calculations are performed in the effective-mass approximation. It is shown that the polarizability decreases with the increasing of the laser intensity and this effect is stronger for high Al concentration at the well center. Our results are in agreement with previous calculations for square and graded quantum wells.