Towards spectroscopy of a few silicon nanocrystals embedded in silica

This work aims at optical isolation of a few silicon nanocrystals (Si-NCs) embedded in silica. We rely on realization of a SiO single layer followed by annealing under vacuum to generate Si-NCs. We first report on optimization of luminescence of single Si-NC layer in SiO2 thin film. An optimum of photoluminescence signal was found for annealing at 1050 °C for 95 min. Then, in order to optically isolate single Si-NCs, lithographic processes such as creation of aluminum masks have been employed. We discuss the challenges and the chances of measuring a photoluminescence signal from few Si-NCs.