Title of article :
Mott and Efros-Shklovskii hopping conductions in porous silicon nanostructures
Author/Authors :
Md Nazrul Islam، نويسنده , , Sanjay K. Ram، نويسنده , , Satyendra Kumar، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
Electrical conductivity of electrochemically etched porous silicon was studied over a wide temperature range from 15 to 450 K. Applicability of various electrical transport mechanisms has been critically analyzed. While the conductivity data above room temperature shows extended state conduction, lowering the temperature leads to Berthelot-type conduction (180–280 K). Further, Mottʹs hopping (in the range 140–180 K) and Efros-Shklovskii hopping (below 120 K) conduction are found to be operating in lower temperature ranges. A clear crossover from Mott to Efros-Shklovskii variable range hopping transport is observed at low temperatures.
Keywords :
Hopping transport , Electrical and electronic properties , Porous silicon
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures