Title of article :
Magneto- and electroabsorption in narrow-gap InSb cylindrical layer quantum dot
Author/Authors :
Marwan Zuhair، نويسنده , , Aram Manaselyan، نويسنده , , Hayk Sarkisyan، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Pages :
8
From page :
1583
To page :
1590
Abstract :
For the regime of strong size quantization, we perform theoretical investigation of electronic states and interband dipole transition in a narrow-gap InSb cylindrical layer quantum dot under the influence of both magnetic and electric field. The energy for the system under consideration is proportional to the magnetic field under square root, unlike the case of parabolic dispersion law. We consider the transition from the light hole and heavy hole states to the electron state of conduction band. In the plane of quantum dot cross section, the electronic states were approximated with the two-dimensional rotator model. The interband absorption coefficient and threshold frequencies for different electric field orientation in the presence of magnetic field were calculated and the selection rules are found. It is found that the electric field changes the selection rules.
Keywords :
Quantum dot , Narrow-gap semiconductor , Electroabsorption
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2008
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1047838
Link To Document :
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