Zero-frequency shot noise in an artificial single molecule magnet

We extend previous transport calculations performed on a single-electron transistor (SET) based upon a semiconductor quantum dot (QD) doped with a single Mn ion (which behaves as a quantum nanomagnet) by calculating the stationary fluctuations of the current, or shot noise, of hole transport through the SET. Our results show that the zero-frequency shot noise is determined by the magnetic state of the QD. In particular, we find super-Poissonian noise in a region of bias and gate voltages where the competing dynamics between slow and fast channels results in bunching.