Title of article
Negative magnetoresistance due to charge fluctuation in mono-layer graphene at the minimum conductivity point
Author/Authors
Ryuta Yagi، نويسنده , , Seiya Fukada، نويسنده , , Hiroaki Kobara، نويسنده , , Norio Ogita، نويسنده , , Masayuki Udagawa، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2009
Pages
4
From page
673
To page
676
Abstract
We have measured magnetotransport of monolayer graphene at the minimum conductivity point in detail to study negative magnetoresistance that often appears in moderately high magnetic field. By studying several samples with different qualities, we found that negative magnetoresistance originated from potential fluctuation that leads to the residual carriers at the minimum conductivity point.
Keywords
Monolayer graphene , Magnetoresistance , Minimum conductivity point , Potential fluctuation
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2009
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1048013
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