Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

In this work we report on temperature-dependent magnetotransport measurements on epitaxial graphene grown on SiC(0001) under different preparation conditions. We demonstrate that the temperature dependence of the charge carrier density and mobility is correlated to the annealing conditions during the graphitization process. As recently shown, SiC substrates annealed in an Ar atmosphere near atmospheric pressure exhibit continuous monolayer graphene films over View the MathML source wide and more than View the MathML source long terraces. For these films we determine a constant charge carrier density in the range from 1.4 K up to room temperature and an electron mobility exceeding View the MathML source at low temperatures.