Title of article :
Cyclotron resonance of two-dimensional electrons in a Si quantum well
Author/Authors :
R. Masutomi، نويسنده , , A. Sekine، نويسنده , , K. Sasaki، نويسنده , , K. Sawano، نويسنده , , Y. Shiraki، نويسنده , , T. Okamoto، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2009
Pages :
4
From page :
1184
To page :
1187
Abstract :
We have performed the cyclotron resonance (CR) measurements on two-dimensional electrons in a Si quantum well. At the electron density View the MathML source, both the CR scattering time τCR and the transport scattering time τt exhibit a metallic temperature dependence down to 0.5 K.The ratio of τt/τCR at 0.4 K shows the positive Ns dependence in the measured Ns region.
Keywords :
Metal–insulator transition , Cyclotron resonance , Si/SiGe
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2009
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1048147
Link To Document :
بازگشت