Title of article
Resonant photocurrent-spectroscopy of individual CdSe quantum dots
Author/Authors
M. Panfilova، نويسنده , , S. Michaelis de Vasconcellos، نويسنده , , A. Pawlis، نويسنده , , K. Lischka، نويسنده , , A. Zrenner، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2009
Pages
3
From page
2521
To page
2523
Abstract
Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.
Keywords
Photodiode , II–VI Semiconductors , Quantum confined Stark effect , CdSe/ZnSe quantum dots , Photocurrent
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2009
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1048382
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