Title of article
Band structures of Bernal graphene modulated by electric fields
Author/Authors
Sing-Jyun Tsai، نويسنده , , Jon-Hsu Ho، نويسنده , , Yu-Huang Chiu، نويسنده , , Ming-Fa Lin، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2009
Pages
3
From page
2796
To page
2798
Abstract
The tight-binding model is utilized to investigate the influence of modulation electric fields on bilayer Bernal graphene (BBG). The electric potential changes the parabolic bands into oscillatory ones, and induces more band-edge states. As the strength of field is strengthened, it would enhance the oscillation of energy band, affect larger range of energy, induced more band-edge states, and cause more overlapping of valence and conduction band. While the period of field is enhanced, the number of sub-bands and band-edge states would increase. However the deformation of energy band is less violent. The essential features of electronic structure are directly reflected on the density of states (DOS). DOS displays many prominent peaks resulting from the induced band-edge states.
Keywords
Modulation electric field , Bilayer Bernal graphene
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2009
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1048459
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