Stable and highly photosensitive device of CdSe nanorods

Photoelectric device has been fabricated using cadmium selenide nanorods with diameter of 200 nm and length of 1 μm, which are obtained by the modified composite-hydroxide-mediated approach. The photoelectric effect of the device has been systematically characterized under the irradiation of a simulated sunlight, including characteristics such as I–V curves, photostability, photocurrent versus illuminant intensity, photocurrent versus electric field intensity, photocurrent response speed, and reproducibility. The highly sensitive responses to light shifts and excellent stability of sustained photocurrent in exposure to light of the device demonstrate its great potential applications as optical sensors/switches with a response time in ∼ms range.