Effects of hydrostatic pressure on intrawell and interwell excitons in a strained GaAs/GaAlAs double quantum well system

Binding energies of intrawell and interwell excitons are investigated in a GaAs/GaAlAs double quantum well system in the presence of hydrostatic pressure applied in the z-direction. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of pressure. The pressure dependent photoionization cross section for a charged exciton placed at the center of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width and the hydrostatic pressure. Our results are compared with the other existing literature available.