Gain simulation of lasing nano-heterostructure Al0.10Ga0.90As/GaAs

The main objectives of this paper are to study the lasing characteristics of an advanced nano-heterostructure of Al0.10Ga0.90As/GaAs material system, which is based on simple SCH (Separate Confinement Heterostructure) model. Infact, the studies made in the paper have been directed towards the modeling and simulation of Al0.10Ga0.90As/GaAs material composition based lasing nano-heterostructure. Under simulation, we have calculated various lasing characteristics such as anti-guiding factor, quasi Fermi levels in conduction and valence bands, gain compression, and differential gain for the proposed nano-heterostructure. In addition, we have also simulated optical and mode gain as a function of photonic energy and lasing wavelength in both TE and TM modes. In results, the simulated optical and mode gain in TE mode have been reported larger than that in TM mode. The simulation of optical gain in both the modes suggests that the proposed lasing nano-heterostructure can be utilized for the emission of radiations in the near infra-red (NIR) region. Hence, the proposed model of lasing nano-heterostructure can be useful in designing the nano-opto-electronic devices that can emit near infra-red radiations.