Efficiency improvement of light-emitting diodes with a developed electron blocking layer structure and its optimization

We study the internal quantum efficiency (IQE) of light-emitting diodes (LEDs) with an added AlxGa1−xN/GaN multi-quantum-barrier as the electron blocking layer (EBL) and optimize the structure parameter. Comparison was performed under same running conditions for LEDs with a single-barrier EBL (conventional design) and multi-quantum-barrier EBL. The numerical simulation shows that the IQE is significantly increased to 63.7% for the optimized structure parameters due to the modified energy band diagrams which are responsible for the enhanced carrier concentration in the active region.