Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wells

We propose a special kind of Sb-based III–V semiconductor quantum wells, which, in contrary to conventional ones, are able to provide novel transport properties: smaller electron transport effective mass and higher mobility with thinner well width. By properly choosing the barrier materials with smaller electron effective mass and proper band lineups, the novel transport property could be achieved because of the penetration effect of the wave-function when interface roughness and alloy disorder scatterings are taken into consideration.