Growth of high quality GaN nanowires by using Ga/GaCl3 sources

High quality GaN nanowires (NWs) were grown on a Si (1 0 0) substrate by using Ga and GaCl3 sources, which were placed at two different zones in a quartz tube, respectively. It was found that the GaCl3 source contributes to the growth of long and straight NWs. The effect of GaCl3 source on NWs growth was discussed. Structure and morphology of the NWs were characterized by X-ray diffraction and scanning electron microscopy, respectively.