Title of article
Collapse of quantized Hall resistance and breakdown of dissipationless state in the integer quantum Hall effect: filling factor dependence
Author/Authors
H. Iizuka، نويسنده , , S. Kawaji، نويسنده , , T. Okamoto، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
4
From page
132
To page
135
Abstract
Magnetic field dependence of critical current for collapse of quantized Hall resistance Icr(collapse) and critical current for breakdown of dissipationless state Icr(breakdown) have been measured near the filling factor ν=4 of Landau levels in a GaAs/AlGaAs heterostructure Hall bar. The difference Icr(breakdown)−Icr(collapse) decreases against the increase and the decrease in ν from 4 and the critical behavior disappears outside of the region 3.85<ν<4.15.
Keywords
Quantum Hall effect , Quantized Hall resistance , Collapse of QHR , Breakdown of QHE , High magnetic field effect , Resistance standards
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049602
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