• Title of article

    The thermopower of a high-mobility Si-MOSFET around the metal-insulator transition

  • Author/Authors

    R Fletcher، نويسنده , , V.M. Pudalov، نويسنده , , M Tsaousidou، نويسنده , , P.N Butcher، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2000
  • Pages
    4
  • From page
    272
  • To page
    275
  • Abstract
    The thermopower of a high-mobility Si-MOSFET sample has been measured as a function of electron density around the metal–insulator transition over the temperature range of about 0.5–4 K. Both diffusion and phonon drag effects are clearly seen, the latter for the first time in an insulator. Each contribution appears to vary smoothly through the MIT without reflecting the strong variation observed in the conductivity.
  • Keywords
    Metal-insulator , Thermopower , Hopping
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2000
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1049635

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1049635