• Title of article

    Vertical quantum dots at high magnetic fields beyond the few-electron limit

  • Author/Authors

    D.G. Austing، نويسنده , , Y Tokura، نويسنده , , S Tarucha، نويسنده , , T.H Oosterkamp، نويسنده , , Geert J.W. Janssen، نويسنده , , M.W.S Danoesastro، نويسنده , , L.P Kouwenhoven، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2000
  • Pages
    6
  • From page
    358
  • To page
    363
  • Abstract
    We describe phenomena that can be studied in vertical quantum dot single electron transistors. Moving from the few-electron to the several- and many-electron regimes, features in the conductance peaks initially related to spin polarization evolve with magnetic field. This allows us to first probe the spin-flip region beyond the last single-particle crossing at low field, and then the formation and stability of the spin-polarized maximum density droplet at high field. According to a simple capacitance model, charge redistribution in the dot at higher magnetic fields is accompanied by abrupt changes in the area of the droplet.
  • Keywords
    Quantum dots , Artificial atom , Spin-flip , Maximum density droplet
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2000
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1049654