Second-harmonic generation in InAs/GaAs self-assembled quantum dots

We have studied second-harmonic generation at midinfrared wavelengths in InAs/GaAs semiconductor self-assembled quantum dots. We show that resonant second-harmonic generation associated with the intraband transitions of the quantum dots can be achieved in p-type samples. Frequency doubling is observed both for a TM- and a TE-polarized infrared excitation. A peak susceptibility value of View the MathML source at 168 meV is deduced for one quantum dot layer. The peak susceptibility results from the achievement of the double resonance between the optical pump field and the h1–h8 and h1–h29 intraband transitions.