Designing of silicon effective quantum dots by using the oxidation-induced strain: a theoretical approach

We have investigated using partial oxidation of an Si wire for forming quantum dots. Calculated results show oxidation induced strain leads to the formation of effective quantum dots, although actual dot-shaped structures are not formed. By investigating formation conditions, we have found that partial oxidation of an Si wire on a (0 0 1) substrate is very efficient for the formation of oxidation-induced effective quantum dots. Moreover, our calculated results are qualitatively consistent with experimental results obtained with our Si single-electron transistors (Si-SET) fabricated by pattern-dependent oxidation (PADOX).