Single electron charging of InAs quantum dots characterized by δ-doped channel conductivity

The electron tunneling through single self-assembled InAs dot in split-gate δ-doped channel transistor structure is reported for the first time. In the nearly pinch-off conditions, the channel current was found to manifest itself single-electron tunneling through a self-assembled InAs dot buried in adjacent to the channel. The line shape of the single-electron tunneling current through a single InAs dot is discussed.