Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γh) of View the MathML source for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γh larger than 3300. The dependence of writing power, electric field, and temperature on the Γh was also investigated using hole burning spectroscopy. The Γh broadened not only as the writing power increased over a few W/cm2 but also as the applied field increased. The Γh showed linear dependence on temperature, and the spectral hole was observed up to 80 K.