Title of article :
Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses
Pages 555-558
Author/Authors :
H Nakano، نويسنده , , H Kubo، نويسنده , , N Mori، نويسنده , , C Hamaguchi، نويسنده , , L Eaves، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Abstract :
Luminescence from a GaAs/AlGaAs asymmetric double-quantum-well structure under intense mid-infrared irradiation with a free electron laser (FEL) has been observed. The FEL wavelength and power dependence has been measured, which is then compared with a result of a full-band Monte Carlo simulation.
Keywords :
Free electron laser , Semiconductor heterostructure , Impact ionization , Monte Carlo simulation
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
