Oscillator strength of type-II light-hole exciton in InxGa1−xAs/GaAs strained single quantum wells

We have investigated the excitonic properties of In0.15Ga0.85As/GaAs strained single quantum wells by using photoreflectance spectroscopy and a variational calculation method. We clearly detected the photoreflectance signal of the type-II light-hole exciton, which consists of an electron confined in the InGaAs layer and a light hole located in the thick GaAs layer, in addition to the type-I heavy-hole exciton confined in the InGaAs layer. The calculated results of the overlap integral of the envelope function in the type-II light-hole exciton predict that the oscillator strength is remarkably enhanced with decreasing the InGaAs-layer thickness. This is demonstrated by the layer-thickness dependence of the photoreflectance intensity of the type-II light-hole exciton.