Electric-field effects on photoluminescence properties in a GaAs/AlAs marginal type-I superlattice

We have investigated the electric-field effects on the cw and time-resolved photoluminescence (PL) properties in a marginal type-I GaAs/AlAs superlattice (SL) whose lowest X state (X1) is situated in the lowest Γ(Γ1) miniband. In the low bias voltage regime, the PL spectra reveal the transition between type-I and type-II radiative recombination processes caused by Wannier–Stark localization. In contrast, in the high bias voltage regime, the decay time of the time-resolved PL is prolonged. This is because of delayed carrier transport caused by Γ–X transfer. From these results, it was found that marginal type-I SLs present various interesting phenomena that originate from the competitive carrier transport among the Γ miniband, the localized Γ Stark–ladder states, and the X1 state.