• Title of article

    Evidence of the Coulomb gap observed in an InAs inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

  • Author/Authors

    Can-Ming Hu، نويسنده , , Junsaku Nitta، نويسنده , , Tatsushi Akazaki، نويسنده , , Hideaki Takayanagi، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2000
  • Pages
    4
  • From page
    795
  • To page
    798
  • Abstract
    We report studies of the in-plane magneto-transport properties of a 2DEG in an InAs inserted InGaAs/InAlAs heterostructure with a DC bias voltage. Temperature dependent zero-bias reduction of the longitudinal resistance was observed when high magnetic field is applied along the sample growth direction. We interpret the observed resistance reduction as the result of a Coulomb gap existing at the Fermi level of the 2DEG.
  • Keywords
    2DEG , Coulomb gap , Electron density of states
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2000
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1049834

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1049834