Title of article
Characterization of sublattice-reversed GaAs by reflection high energy electron diffraction and transmission electron microscopy
Author/Authors
S Koh، نويسنده , , T Kondo، نويسنده , , Naruhiko Ishiwada، نويسنده , , H Sawada، نويسنده , , H Ichinose، نويسنده , , I Shoji، نويسنده , , R Ito، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
5
From page
876
To page
880
Abstract
Sublattice-reversed GaAs crystals grown by the lattice-matched GaAs/Ge/GaAs (100) and (111) sublattice reversal epitaxy have been characterized by reflection high-energy electron diffraction and cross-sectional transmission electron microscopy. The sublattice reversal in the GaAs/Ge/GaAs (100) system has been verified to be assisted by self-annihilation of the antiphase domains generated at the GaAs/Ge interface. The sublattice reversal in the GaAs/Ge/GaAs (111) system seems to result from the unique structure of the As-terminated Ge (111) surfaces. Unusual (111)Σ3 grain boundaries have been observed in the sublattice-reversed GaAs (111) crystal.
Keywords
Sublattice reversal , Domain inversion , Molecular beam epitaxy , Antiphase domain , Grain boundary , Frequency conversion , Quasi-phase matching
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049851
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