Characterization of sublattice-reversed GaAs by reflection high energy electron diffraction and transmission electron microscopy

Sublattice-reversed GaAs crystals grown by the lattice-matched GaAs/Ge/GaAs (100) and (111) sublattice reversal epitaxy have been characterized by reflection high-energy electron diffraction and cross-sectional transmission electron microscopy. The sublattice reversal in the GaAs/Ge/GaAs (100) system has been verified to be assisted by self-annihilation of the antiphase domains generated at the GaAs/Ge interface. The sublattice reversal in the GaAs/Ge/GaAs (111) system seems to result from the unique structure of the As-terminated Ge (111) surfaces. Unusual (111)Σ3 grain boundaries have been observed in the sublattice-reversed GaAs (111) crystal.