Toward nano-metal buried structure in InP – 20 nm wire and InP buried growth of tungsten

Toward nano-metal buried structure in InP, we studied the fabrication process of nano-tungsten wire and the InP buried growth of tungsten stripes. A tungsten wire with a 20 nm width was fabricated by the proposed metal-stencil liftoff, in which gold/chromium and SiO2 replace resist to prevent thermal deformation in a conventional liftoff process. The buried growth of tungsten stripes with View the MathML sourcem widths and View the MathML sourcem pitch by organometallic vapor phase epitaxy (OMVPE) was studied. Tungsten stripes were buried under the flat InP layer of View the MathML sourcem thickness, and the ratio of grown InP thickness to buried tungsten width was about 1.