Title of article
quantum wells
Author/Authors
T Adachi، نويسنده , , Y Ohno، نويسنده , , F Matsukura، نويسنده , , H Ohno، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
4
From page
36
To page
39
Abstract
We measured the electron spin relaxation time τs in n-modulation doped GaAs/AlGaAs (110) multiple quantum wells by pump probe method. The value of τs exceeds View the MathML source even at room temperature, which is two orders of magnitude longer than that in (001) GaAs quantum wells. The τs dependence on quantized-electron energy, pump beam power and temperature can qualitatively be explained by the reduction of the electron-hole exchange interaction due to screening.
Keywords
Quantum wells , Electron spin , Spin relaxation , GaAs/AlGaAs
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2001
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049887
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