Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes

Magnetic domain structure of a ferromagnetic semiconductor, (Ga,Mn)As, is observed with a scanning Hall probe microscope and a scanning SQUID microscope at low temperature. The film with perpendicular magnetization has a maze pattern domain structure similar to those of conventional ferromagnetic materials, whereas the film with in-plane magnetization has unconventional domain structure that show random arrangement of the domains.