Title of article
Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs
Author/Authors
Yoshihiro Satoh، نويسنده , , Daisuke Okazawa، نويسنده , , Ayato Nagashima، نويسنده , , Junji Yoshino، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
5
From page
196
To page
200
Abstract
Magnetotransport and magnetic properties of p-type GaMnAs layers, in which hole concentrations and Mn concentrations are independently controlled by Sn-donor incorporation, have been studied. Negative magnetoresistance has been enhanced by increasing Sn-incorporation. Hole concentration dependence of ferromagnetic transition temperature, determined from residual magnetization-temperature characteristic measured by DC-SQUID magnetometer has been investigated.
Keywords
Ferromagnetism , Diluted magnetic semiconductors , GaMnAs
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2001
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049919
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