Title of article
Phonons in III–V nitrides: Confined phonons and interface phonons
Author/Authors
M Dutta، نويسنده , , D Alexson، نويسنده , , L Bergman، نويسنده , , R.J. Nemanich Chair، نويسنده , , R Dupuis، نويسنده , , K.W Kim، نويسنده , , S Komirenko، نويسنده , , M Stroscio، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
4
From page
277
To page
280
Abstract
Phonons in III–V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudonʹs model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN–AlN superlattices are presented.
Keywords
Confined optical phonons , Raman scattering , Wurtzites , Nitrides
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2001
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050023
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