The quantum Hall effect in an InAs/GaSb based electron–hole system and its current-driven breakdown

We examine the quantum Hall effect in an electron–hole system and its current-driven breakdown. We find that samples with closely matched electron and hole concentrations have vastly reduced critical currents while those with many more electrons than holes show much larger critical currents, though still smaller than those reported for single-carrier type systems. The channel width dependence shows two regimes of behaviour. States with larger critical currents View the MathML source have linear width dependence, while for narrower channel widths where the critical current is smaller, the critical current has a superlinear relationship with the channel width.