Title of article
Exchange-enhanced Landé g-factor, effective disorder and collapse of spin-splitting in a two-dimensional GaAs electron system
Author/Authors
Tsai-Yu Huang، نويسنده , , Yu-Ming Cheng، نويسنده , , C.-T Liang، نويسنده , , Gil-Ho Kim، نويسنده , , J.Y. Leem، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
424
To page
427
Abstract
We have measured the low-temperature transport properties of front-gated GaAs/Al0.33Ga0.67As heterostructures. Collapse of spin-splitting and an enhanced Landé |g|-factor at Landau level filling factors both ν=3 and 1 are observed. Our experimental results show direct evidence that the electron–electron interactions are stronger at ν=3 than those at ν=1 over approximately the same perpendicular magnetic field range.
Keywords
GaAs , g-factor , Spin
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050128
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