Title of article
Scaling behavior of metal–insulator transitions in a Si/SiGe two dimensional hole gas
Author/Authors
C. Possanzini، نويسنده , , L. Ponomarenko، نويسنده , , D. de Lang، نويسنده , , A. de Visser، نويسنده , , S.M. Olsthoorn، نويسنده , , R. Fletcher، نويسنده , , Y. Feng، نويسنده , , P.T Coleridge، نويسنده , , R.L. Williams، نويسنده , , J.C. Maan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
600
To page
603
Abstract
We report the temperature dependence of magnetotransport measurements in a Si/SiGe two-dimensional hole gas (2DHG) and we analyze the curves in terms of scaling. A reentrant insulating transition is observed at filling factor ν=1.5, followed by a second high field insulating phase at ν<1. A scaling behavior in temperature of the width of the longitudinal conductivity, its second derivative and the slope of the Hall conductivity has been observed, for both the transitions to the insulating state.
Keywords
Metal–insulator transition , Scaling , SiGe
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050172
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