Title of article :
Percolation of quantum Hall droplets in intentionally disordered GaAs/GaAlAs heterojunctions
Author/Authors :
Katrin Buth، نويسنده , , Michael Widmann، نويسنده , , Ulrich Merkt، نويسنده , , Edwin Batke، نويسنده , , Karl Eberl، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Abstract :
The transition of two-dimensional electron systems (2DES) with intentional disorder in form of a δ-layer doped with beryllium into quantum Hall insulators composed of separate electron droplets is examined by magnetotransport and far-infrared spectroscopy. We observe the percolation threshold at filling factors clearly below View the MathML source that is expected for statistical disorder. The far-infrared excitations bear strong resemblance to magnetoplasmons of density-modulated 2DES and antidot systems in regular arrays. Thus, a perceptible degree of short-range order between the sites of the beryllium acceptors is uncovered.
Keywords :
Quantum Hall insulator , Far-infrared excitation
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures