• Title of article

    The influence of carrier diffusion on the formation of charged excitons in InAs/GaAs quantum dots

  • Author/Authors

    K.F. Karlsson، نويسنده , , E.S. Moskalenko، نويسنده , , P.O. Holtz، نويسنده , , B. Monemar، نويسنده , , W.V. Schoenfeld، نويسنده , , J.M. Garcia، نويسنده , , P.M Petroff، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2002
  • Pages
    4
  • From page
    101
  • To page
    104
  • Abstract
    It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusivity of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots (QDs). This is proposed as an effective tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons.
  • Keywords
    Quantum dots , Charged excitons , Diffusion
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2002
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1050260