Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots

We present measurements of the optical dipole of interband transitions in InAs/GaAs quantum dots. Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical transitions have been determined, and the electronic structure is discussed, with focus on the heavy-hole versus light-hole character of valence states.