Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots

We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots.