Photo-current spectroscopy of modulation doped InAs self-assembled quantum dots

We present results of calculations and experiments on photo-current spectroscopy of modulation doped InAs self-assembled quantum dots. We derive an expression for the transition probability describing the dependence of the photo-current on the parameters of the dot, the number of carriers, and the polarization and energy of incident photons. The results of preliminary calculations are compared with experiments, which clearly show the dependence on photon energy and polarization.