Title of article :
Localised and resonant states of shallow acceptors in Ge/Ge1−xSix multiple-quantum well heterostructures
Author/Authors :
V.Ya. Aleshkin، نويسنده , , B.A. Andreev، نويسنده , , V.I. Gavrilenko، نويسنده , , I.V. Erofeeva، نويسنده , , D.V. Kozlov، نويسنده , , O.A. Kuznetsov، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
4
From page :
317
To page :
320
Abstract :
A new theoretical approach allowing to calculate both the localised and the continuum states of charge carriers in QW heterostructures in the presence of the Coulomb potential has been developed. The method allows to satisfactorily describe the observed photoconductivity spectra of Ge/GeSi heterostructures. The optical transitions from the acceptor ground states to the resonant states have been revealed in the measured far IR photoconductivity spectra.
Keywords :
Acceptor , Photoconductivity , Resonant states , Quantum wells
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050310
Link To Document :
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