Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

We report here on a photoluminescence (PL) and photoreflectance (PR) study of InGaAs/AlAsSb multiple quantum wells (MQWs), grown by molecular beam epitaxy, with different interface terminations. The PL spectrum of Sb-terminated MQWs exhibits strong excitation laser power dependence. This laser power dependence can be attributed to a redistribution of carriers, especially holes, in the well. Features of the quantum well related inter-band transitions are clearly observed in the room-temperature and View the MathML source PR spectra of As- and Sb-terminated MQWs. The observed QW transition energies correspond well with the calculated inter-band transition energies. No indications of interface-related transitions are observed from the View the MathML source PR spectrum of the Sb-terminated sample.