Title of article
Spin polarization dynamics in n-doped InAs/GaAs quantum dots
Author/Authors
Vanessa S. Cortez de Oliveira Radke، نويسنده , , A. Jbeli، نويسنده , , X. Marie، نويسنده , , M. O. Krebs، نويسنده , , R. Ferreira، نويسنده , , T. Amand، نويسنده , , P. Voisin، نويسنده , , J.-M. Gérard، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
508
To page
511
Abstract
We present measurements of electronic spin relaxation and manipulation in n-doped semiconductor quantum dots. A luminescence based nonresonant pump-probe method has been developed to determine the degree of spin polarization of electrons confined in the dots. We observe an electronic spin memory effect up to View the MathML source. The mechanism of spin polarization and relaxation are thoroughly analyzed both by continuous wave and time resolved nonresonant luminescence.
Keywords
InAs quantum dot , Spin relaxation
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050353
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