Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy

We describe transport measurements in a novel dual-gated single electron transistor based on a quantum dot (QD) fabricated by selective area growth of metalorganic vapor phase epitaxy. We observed, for the first time, clear Coulomb oscillations fabricated in combination with direct growth and lithographically defined metal gates, and achieved nearly independent control of the QD potential and the tunneling barrier height. We also were able to observe a signature of Kondo resonance when the coupling between leads and a quantum dot was sufficiently strong.