Title of article
Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range
Author/Authors
V. Senz، نويسنده , , T. Ihn، نويسنده , , T. Heinzel، نويسنده , , K. Ensslin، نويسنده , , G. Dehlinger، نويسنده , , D. Grützmacher، نويسنده , , U. Gennser، نويسنده , , E.H. Hwang، نويسنده , , S. Das Sarma، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
5
From page
723
To page
727
Abstract
The temperature dependence of a system exhibiting a ‘metal–insulator transition in two dimensions at zero magnetic field’ (MIT) is studied up to View the MathML source. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate 1/τD(E,T), each dominating in a limited temperature range.
Keywords
SiGe , Two-dimensional transport , Metal–insulator transition , Scattering
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050403
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