Title of article
Negative magnetoresistance of SiGe quantum wells doped with boron
Author/Authors
R. Zobl، نويسنده , , E. Gornik، نويسنده , , I.V. Altukhov، نويسنده , , E.G. Landsberg، نويسنده , , N.G. Zhdanova، نويسنده , , K.A. Korolev، نويسنده , , M.S. Kagan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
3
From page
741
To page
743
Abstract
Negative magnetoresistance is observed in boron-doped SiGe/Si quantum-well structures. The effect of a random potential caused by charged boron δ-layers in barriers on quantum corrections to the conductivity is found. Elastic and inelastic scattering times of holes as well as the magnitude of the random potential are determined.
Keywords
Quantum corrections to the conductivity , Negative magnetoresistance , Quantum well
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050407
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