Quantum transport calculations for quantum cascade laser structures

We apply a quantum transport theory based on nonequilibrium Greenʹs functions to quantum cascade laser (QCL) structures, treating simultaneously the transmission through the injector regions and the relaxation due to scattering in the active region. The quantum kinetic equations are solved self-consistently using self-energies for interface roughness and phonon scattering processes within the self-consistent Born approximation. In this way, we obtain the current density J, and the average electronic distribution f(E) at a given energy E, as a function of applied bias. As a test case, we apply the theory to a GaAs/AlxGa1−xAs QCL structure reported in the literature. The theoretical results reproduce well reported voltage–current (V–I) measurements, and also demonstrate a population inversion at a bias that agrees well with the range of currents and fields at which lasing is observed.