Title of article
THz intersubband dynamics in p-Si/SiGe quantum well structures
Author/Authors
C.R Pidgeon، نويسنده , , P Murzyn، نويسنده , , J.-P.R Wells، نويسنده , , I.V Bradley، نويسنده , , Z Ikonic، نويسنده , , R.W Kelsall، نويسنده , , P Harrison، نويسنده , , SA Lynch، نويسنده , , D.J Paul، نويسنده , , D.D Arnone، نويسنده , , D.J Robbins، نويسنده , , D Norris، نويسنده , , A.G. Cullis، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
904
To page
907
Abstract
We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω<ℏωLO, utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump–probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement we determine a decay time of View the MathML source. This is found to be approximately constant in the temperature range from 4 to View the MathML source, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.
Keywords
Si/SiGe , Alloy scattering , Intersubband absorption
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050445
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