Switching characteristics and demonstration of logic functions in modulation doped GaAs/AlGaAs nanoelectronic devices

Nanoelectronic Y-branches with lengths of the branching section down to View the MathML source were fabricated by high-resolution electron beam lithography and wet etching from modulation doped GaAs/AlGaAs heterostructures. For voltages Vl and Vr applied to the left and right branch reservoirs of a symmetric, ballistic Y-branch switch in push–pull fashion (i.e., Vl=−Vr) a negative output voltage Vs was detected at the floating reservoir directly connected to the central stem.